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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 175 MHz, 50 V: Output Power -- 300 W Gain -- 14 dB (16 dB Typ) Efficiency -- 50% 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION * Low Thermal Resistance -- 0.35C/W * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G G S (FLANGE) CASE 375-04, STYLE 2 D MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 40 40 500 2.85 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.35 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MOTOROLA RF (c) Motorola, Inc. 1998 DEVICE DATA MRF151G 1 PRODUCT TRANSFERRED TO M/A-COM MRF151G ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Each Side) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 -- -- -- -- -- -- 5.0 1.0 Vdc mAdc Adc ON CHARACTERISTICS (Each Side) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 1.0 5.0 3.0 3.0 7.0 5.0 5.0 -- Vdc Vdc mhos DYNAMIC CHARACTERISTICS (Each Side) Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 350 220 15 -- -- -- pF pF pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common Source Amplifier Power Gain (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz) Drain Efficiency (VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A) Load Mismatch (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, VSWR 5:1 at all Phase Angles) R1 C4 C5 C9 C10 Gps No Degradation in Output Power 14 50 16 55 -- -- dB % + BIAS 0-6 V - L2 C11 + 50 V - R2 C1 T1 C6 C2 C3 D.U.T. T2 L1 OUTPUT C12 INPUT C7 C8 R1 -- 100 Ohms, 1/2 W R2 -- 1.0 kOhm, 1/2 W C1 -- Arco 424 C2 -- Arco 404 C3, C4, C7, C8, C9 -- 1000 pF Chip C5, C10 -- 0.1 F Chip C6 -- 330 pF Chip C11 -- 0.47 F Ceramic Chip, Kemet 1215 or C11 -- Equivalent (100 V) C12 -- Arco 422 L1 -- 10 Turns AWG #18 Enameled Wire, L1 -- Close Wound, 1/4 I.D. L2 -- Ferrite Beads of Suitable Material for L2 -- 1.5-2.0 H Total Inductance Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent. T1 -- 9:1 RF Transformer. Can be made of 15-18 Ohms T1 -- Semirigid Co-Ax, 62-90 Mils O.D. T2 -- 1:4 RF Transformer. Can be made of 16-18 Ohms T2 -- Semirigid Co-Ax, 70-90 Mils O.D. Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, r = 5.0 NOTE: For stability, the input transformer T1 must be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. See Figure 6 for construction details of T1 and T2. Figure 1. 175 MHz Test Circuit MRF151G 2 MOTOROLA RF DEVICE DATA PRODUCT TRANSFERRED TO M/A-COM ARCHIVE INFORMATION TYPICAL CHARACTERISTICS 1000 500 C, CAPACITANCE (pF) 200 100 50 20 0 0 Crss Ciss Coss 2000 f T, UNITY GAIN FREQUENCY (MHz) VDS = 30 V 1000 15 V ARCHIVE INFORMATION 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 0 0 2 4 6 10 14 8 12 ID, DRAIN CURRENT (AMPS) 16 18 20 Figure 2. Capacitance versus Drain-Source Voltage* *Data shown applies to each half of MRF151G. Figure 3. Common Source Unity Gain Frequency versus Drain Current* 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 -25 VGS , DRAIN SOURCE VOLTAGE (NORMALIZED) 100 ID = 5 A 4A 2A 1A 250 mA 0 100 mA 25 50 75 TC, CASE TEMPERATURE (C) 100 I D, DRAIN CURRENT (AMPS) TC = 25C 10 1 2 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 200 Figure 4. Gate-Source Voltage versus Case Temperature* Figure 5. DC Safe Operating Area HIGH IMPEDANCE WINDINGS CENTER TAP 9:1 IMPEDANCE RATIO CENTER TAP 4:1 IMPEDANCE RATIO CONNECTIONS TO LOW IMPEDANCE WINDINGS Figure 6. RF Transformer MOTOROLA RF DEVICE DATA MRF151G 3 PRODUCT TRANSFERRED TO M/A-COM TYPICAL CHARACTERISTICS 350 f = 150 MHz Pout , OUTPUT POWER (WATTS) 300 250 200 150 100 50 0 0 VDD = 50 V IDQ = 2 x 250 mA 175 MHz 200 MHz GPS, POWER GAIN (dB) 30 25 20 15 10 5 VDD = 50 V IDQ = 2 x 250 mA Pout = 150 W ARCHIVE INFORMATION 5 Pin, INPUT POWER (WATTS) 10 2 5 10 30 f, FREQUENCY (MHz) 100 200 Figure 7. Output Power versus Input Power Figure 8. Power Gain versus Frequency 150 125 100 f = 175 MHz INPUT, Zin (GATE TO GATE) Zo = 10 30 125 150 f = 175 MHz 100 30 OUTPUT, ZOL* (DRAIN TO DRAIN) ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 9. Input and Output Impedance MRF151G 4 MOTOROLA RF DEVICE DATA PRODUCT TRANSFERRED TO M/A-COM AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAA A A A A A A A A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA NOTE: S-Parameter data represents measurements taken from one chip only. MOTOROLA RF DEVICE DATA f MHz 430 420 410 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 100 110 90 80 70 60 50 40 30 0.976 0.977 0.976 0.976 0.977 0.976 0.976 0.977 0.975 0.976 0.975 0.974 0.976 0.975 0.974 0.974 0.972 0.973 0.972 0.970 0.971 0.969 0.967 0.967 0.964 0.962 0.960 0.957 0.954 0.950 0.946 0.942 0.936 0.932 0.925 0.918 0.912 0.902 0.895 0.886 0.877 |S11| S11 ARCHIVE INFORMATION Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) -174 10.10 |S21| S21 77 0.008 |S12| S12 19 0.707 |S22| S22 -169 PRODUCT TRANSFERRED TO M/A-COM -180 -180 -179 -179 -178 -178 -177 -177 -177 -176 -176 -175 -175 171 172 172 172 173 173 173 174 174 174 174 175 175 176 176 176 176 177 177 177 178 178 178 179 179 179 180 0.19 0.21 0.22 0.23 0.24 0.26 0.26 0.28 0.29 0.30 0.31 0.33 0.36 0.39 0.40 0.41 0.45 0.47 0.51 0.57 0.60 0.67 0.71 0.75 0.84 0.90 1.01 1.13 1.23 1.39 1.55 1.77 2.06 2.34 2.69 3.19 3.86 4.73 5.76 7.47 10 10 10 10 12 12 12 14 16 18 19 20 22 24 27 30 32 35 37 40 45 48 52 58 63 69 11 9 9 7 7 8 8 7 4 7 9 6 9 9 0.073 0.071 0.071 0.068 0.066 0.065 0.061 0.059 0.058 0.056 0.056 0.053 0.049 0.048 0.046 0.046 0.044 0.041 0.039 0.037 0.038 0.035 0.032 0.030 0.028 0.026 0.024 0.023 0.021 0.019 0.017 0.015 0.014 0.013 0.010 0.009 0.009 0.008 0.009 0.011 76 76 77 80 76 75 76 79 80 77 78 78 82 82 79 80 80 79 80 80 81 82 80 79 80 82 82 79 78 77 77 76 72 67 62 54 46 39 33 24 0.950 0.962 0.999 0.955 0.960 0.944 0.981 0.978 0.950 0.948 0.935 0.954 0.943 0.929 0.944 0.965 0.953 0.954 0.935 0.950 0.950 0.949 0.937 0.922 0.929 0.931 0.904 0.909 0.884 0.874 0.875 0.865 0.850 0.808 0.802 0.784 0.764 0.756 0.715 0.911 MRF151G 5 -180 -179 -178 -176 -177 -176 -175 -174 -172 -173 -175 -173 -171 -171 -172 -171 -171 -172 168 168 170 173 171 171 170 172 174 172 172 173 176 176 175 175 176 178 179 179 179 180 AAAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAA A A A A A A A AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A A AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA A A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAA A A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA AA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA f MHz f MHz 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 100 500 490 480 470 460 450 440 110 90 80 70 60 50 40 30 0.986 0.985 0.985 0.984 0.984 0.984 0.984 0.984 0.983 0.982 0.981 0.980 0.980 0.979 0.977 0.975 0.972 0.969 0.966 0.964 0.962 0.958 0.953 0.945 0.935 0.924 0.901 0.892 0.883 0.869 0.834 0.972 0.973 0.974 0.978 0.978 0.978 0.976 0.911 |S11| |S11| MRF151G 6 Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) (continued) S11 171 171 |S21| 0.19 0.20 S21 10 12 0.080 0.075 |S12| S12 77 75 0.982 0.953 |S22| S22 168 168 PRODUCT TRANSFERRED TO M/A-COM S11 Table 2. Common Source S-Parameters (VDS = 50 V, ID = 0.38 A) -180 ARCHIVE INFORMATION -179 -179 -179 -178 -178 -178 -177 -177 -176 -175 -175 -174 -174 -173 -173 -172 -171 -170 -169 -168 177 177 177 178 178 178 179 179 179 180 180 169 169 170 170 170 |S21| 0.22 0.20 0.23 0.24 0.25 0.27 0.30 0.34 0.34 0.38 0.38 0.41 0.44 0.50 0.56 0.65 0.74 0.79 0.85 0.93 1.01 1.14 1.36 1.67 1.99 2.39 2.80 3.39 4.03 5.13 6.47 9.70 0.17 0.17 0.18 0.18 0.18 S21 -4 12 10 17 21 24 24 23 23 25 29 35 42 47 50 51 55 62 74 14 13 13 10 13 11 7 3 7 4 0 3 4 8 9 9 7 8 0.017 0.019 0.019 0.017 0.014 0.012 0.013 0.014 0.014 0.009 0.009 0.008 0.008 0.008 0.007 0.006 0.005 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.008 0.009 0.010 0.012 0.013 0.014 0.089 0.086 0.085 0.081 0.082 0.011 0.011 |S12| S12 -10 -17 -15 -14 -16 -20 -24 -24 -19 -10 87 90 83 74 69 73 79 80 76 74 74 79 81 72 63 56 57 61 58 45 26 73 75 78 77 74 4 MOTOROLA RF DEVICE DATA 1.100 1.060 0.964 0.951 0.996 1.040 1.180 1.220 1.180 1.060 1.020 1.020 0.958 1.010 1.210 1.250 1.170 1.080 0.983 0.935 0.934 0.988 1.070 1.100 1.100 0.996 0.912 0.823 0.754 0.731 0.747 0.980 0.966 0.944 0.953 0.990 1.110 |S22| S22 -178 -178 -177 -179 -180 -179 -176 -178 -175 -172 -174 -174 -174 -173 -173 -173 -172 -170 -169 -167 -169 -167 -167 -168 -167 -164 -161 -159 -162 179 180 179 165 165 167 168 165 AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAA A A A A A A A A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA f MHz 500 490 480 470 460 450 440 430 420 410 400 390 380 370 360 350 0.986 0.986 0.985 0.984 0.984 0.985 0.986 0.986 0.986 0.985 0.985 0.985 0.985 0.985 0.986 0.986 |S11| MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION Table 2. Common Source S-Parameters (VDS = 50 V, ID = 0.38 A) (continued) S11 176 177 |S21| 0.19 0.20 S21 -2 5 0.021 0.017 |S12| S12 67 76 1.160 1.140 |S22| S22 -180 180 PRODUCT TRANSFERRED TO M/A-COM 173 173 173 174 174 174 174 174 175 175 175 176 176 176 0.10 0.10 0.10 0.10 0.13 0.13 0.13 0.13 0.14 0.14 0.15 0.16 0.17 0.11 -1 -2 -1 -3 -3 6 1 3 0 4 5 2 3 0 0.035 0.038 0.034 0.025 0.022 0.025 0.030 0.031 0.027 0.021 0.018 0.021 0.024 0.024 93 79 66 59 68 87 81 73 68 72 85 85 77 69 1.010 1.020 0.993 1.020 1.090 1.140 1.100 1.060 1.040 0.962 0.993 1.070 1.100 1.110 MRF151G 7 -180 -180 -180 177 178 179 177 176 178 177 177 177 179 180 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate-to-drain (Cgd), and gate- to-source (C gs ). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd ARCHIVE INFORMATION Cgd GATE Cds Cgs SOURCE HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF151G is an RF Power, MOS, N-channel enhancement mode field-effect transistor (FET) designed for HF and VHF power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF151G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF151G was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF151G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA RF DEVICE DATA LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-cirMRF151G 8 PRODUCT TRANSFERRED TO M/A-COM cuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. NOTES MOTOROLA RF DEVICE DATA MRF151G 9 PACKAGE DIMENSIONS U G 1 2 Q RADIUS 2 PL 0.25 (0.010) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q R U INCHES MIN MAX 1.330 1.350 0.370 0.410 0.190 0.230 0.215 0.235 0.050 0.070 0.430 0.440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.40 10.41 4.83 5.84 5.47 5.96 1.27 1.77 10.92 11.18 2.59 2.84 0.11 0.15 4.83 5.33 21.46 22.23 1.52 1.78 9.91 10.41 27.94 BSC R 5 -B- K 3 4 D N J E H -T- -A- C SEATING PLANE DRAIN DRAIN GATE GATE SOURCE CASE 375-04 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 MRF151G 10 MOTOROLA RF DEVICE MRF151G/D DATA |
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